The world's number one chipmaker, Korea's Samsung Electronics, announced Thursday that it became the first in the world to start mass producing the 20-nanometer class Dynamic Random Access Memory flash chips. The leading chipmaker says the latest DRAM has the same capacity as the 30-nanometer class DRAM introduced in July last year but the latest technology offers a 50 percent improvement in productivity and reduces energy consumption by 40 percent. This has placed Samsung's technology around six to 18 months ahead of its Taiwanese and Japanese rivals which still produces 30 or 40-nanometer class chips. The industry's second-largest chipmaker, Hynix Semiconductor also based in Korea is trying to catch up as it plans to develop and start producing 20-nanometer class chips by the end of this year. Meanwhile, the world's number three DRAM maker, Japan's Elpida Memory announced earlier this year that it will start producing 25-nanometer DRAMs but that still hasn't happened yet. Meanwhile, Samsung also began operations of the world's biggest memory fabrication facility, the Line-16 which is producing NAND flash memory devices and boasts a size equivalent to 28 soccer fields. Experts predict Samsung's recent success of producing the 20-nano class DRAMs will redeem the company's slowed-down sales during the second quarter of this year by boosting its mobile and semiconductor sectors. Moreover, the company's Chairman Lee Kun-hee vowed to maintain its leadership in the global memory chip sector on Thusday. Echoing the Chairman's words, Samsung continues to stay ambitious and says it will begin production of more advanced flash chips using a 10-nanometer process next year.